N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8SH Vishay SISHA04DN-T1-GE3
- RS Stock No.:
- 188-5123
- Mfr. Part No.:
- SISHA04DN-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)**
€7.52
(exc. VAT)
€9.25
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 90 | €0.752 | €7.52 |
| 100 - 240 | €0.677 | €6.77 |
| 250 - 490 | €0.581 | €5.81 |
| 500 - 990 | €0.49 | €4.90 |
| 1000 + | €0.421 | €4.21 |
**price indicative
- RS Stock No.:
- 188-5123
- Mfr. Part No.:
- SISHA04DN-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK 1212-8SH | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 52 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +20 V | |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Height | 0.93mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK 1212-8SH | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 52 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +20 V | ||
Typical Gate Charge @ Vgs 51 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 3.3mm | ||
Width 3.3mm | ||
Height 0.93mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||