STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 192-4649
- Mfr. Part No.:
- STB18N60M6
- Manufacturer:
- STMicroelectronics
Subtotal (1 reel of 1000 units)*
€1,323.00
(exc. VAT)
€1,627.00
(inc. VAT)
Temporarily out of stock
- Shipping from 05 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | €1.323 | €1,323.00 |
*price indicative
- RS Stock No.:
- 192-4649
- Mfr. Part No.:
- STB18N60M6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Width | 9.35 mm | |
| Height | 4.37mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Width 9.35 mm | ||
Height 4.37mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Related links
- STMicroelectronics STB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 STB18N60M6
- STMicroelectronics STB Type N-Channel MOSFET 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- Infineon 600V CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R180C7ATMA1
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB18N60M2
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
