Vishay SiDR626LDP Type N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8

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Subtotal 50 units (supplied on a continuous strip)*

€159.80

(exc. VAT)

€196.55

(inc. VAT)

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Units
Per unit
50 - 120€3.196
125 - 245€2.592
250 - 495€2.234
500 +€1.918

*price indicative

Packaging Options:
RS Stock No.:
210-4957P
Mfr. Part No.:
SiDR626LDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

204A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SiDR626LDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

41nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Length

5.9mm

Height

0.51mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type.

TrenchFET® Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Top side cooling feature provides additional venue for thermal transfer