Taiwan Semi TSM025 Silicon MOSFET, 38 A, 40 V, 8-Pin PDFN56 TSM150NB04DCR
- RS Stock No.:
- 216-9694
- Mfr. Part No.:
- TSM150NB04DCR
- Manufacturer:
- Taiwan Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 216-9694
- Mfr. Part No.:
- TSM150NB04DCR
- Manufacturer:
- Taiwan Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Maximum Continuous Drain Current | 38 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 15 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Silicon | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Silicon | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested