Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1

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Subtotal (1 pack of 2 units)*

€9.81

(exc. VAT)

€12.066

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8€4.905€9.81
10 - 18€4.32€8.64
20 - 48€4.025€8.05
50 - 98€3.73€7.46
100 +€3.485€6.97

*price indicative

Packaging Options:
RS Stock No.:
233-4387
Mfr. Part No.:
IPTG014N10NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

366A

Maximum Drain Source Voltage Vds

100V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

169nC

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.1mm

Height

2.4mm

Width

8.75 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 100 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

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