Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252

View all MOSFETs

Subtotal (1 reel of 3000 units)*

€813.00

(exc. VAT)

€999.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +€0.271€813.00

*price indicative

RS Stock No.:
262-6769
Mfr. Part No.:
IRFR9024NTRLPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-11A

Maximum Drain Source Voltage Vds

-55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

175mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12.7nC

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated

Fast switching

Related links