Microchip Type N-Channel MOSFET, 4 A, 400 V MOSFET, 3-Pin TO-252
- RS Stock No.:
- 264-8923P
- Mfr. Part No.:
- TN2640K4-G
- Manufacturer:
- Microchip
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
€107.75
(exc. VAT)
€132.55
(inc. VAT)
In Stock
- 1,844 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 98 | €2.155 |
| 100 - 248 | €1.93 |
| 250 - 998 | €1.895 |
| 1000 + | €1.86 |
*price indicative
- RS Stock No.:
- 264-8923P
- Mfr. Part No.:
- TN2640K4-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 0.36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 0.36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage