IRFD110PBF N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay

  • RS Stock No. 541-1039
  • Mfr. Part No. IRFD110PBF
  • Manufacturer Vishay
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance

MOSFET Transistors, Vishay Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1 A
Maximum Drain Source Voltage 100 V
Package Type HVMDIP
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 540 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 1.3 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 3.37mm
Transistor Material Si
Width 6.29mm
Length 5mm
Typical Gate Charge @ Vgs 8.3 nC @ 10 V
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
301 In stock for delivery within 2 working days
Unit of sale: Each
2.20
(exc. VAT)
2.71
(inc. VAT)
units
Per unit
1 - 19
€2.20
20 - 24
€0.57
25 - 49
€0.51
50 +
€0.46
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