P-Channel MOSFET, 15 A, 20 V, 8-Pin SOIC Infineon IRF7425PBF

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
650-3943
Mfr. Part No.:
IRF7425PBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

87 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4mm

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Series

HEXFET

P-Channel Power MOSFET 12V to 20V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRF7425 is the 20V single P-channel HEXFET power MOSFET in a SO-8 package.

RoHS compliant
Industry leading quality
Industry standard pinout
P-channel MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.