P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3

RS Stock No.:: 710-3238P
Mfr. Part No.:: SI2301CDS-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3

1080 In stock for delivery within 2 working days

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

€0.215

(exc. VAT)

€0.264

(inc. VAT)

Units	Per unit
200 - 480	€0.215
500 - 980	€0.161
1000 - 1980	€0.134
2000 +	€0.121

RS Stock No.:: 710-3238P
Mfr. Part No.:: SI2301CDS-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	2.3 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	112 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	860 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Length	3.04mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip	1
Transistor Material	Si
Width	1.4mm
Height	1.02mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor