Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3

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Subtotal (1 pack of 5 units)*

€1.98

(exc. VAT)

€2.435

(inc. VAT)

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Per Pack*
5 +€0.396€1.98

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Packaging Options:
RS Stock No.:
710-4736
Mfr. Part No.:
SI4840BDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.012Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

6W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

150°C

Height

1.55mm

Length

5mm

Standards/Approvals

RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21)

Width

4 mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


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