N-Channel MOSFET Transistor, 38 A, 1000 V, 3-Pin PLUS264 IXYS IXFB38N100Q2
- RS Stock No.:
- 711-5336P
- Mfr. Part No.:
- IXFB38N100Q2
- Manufacturer:
- IXYS
Bulk discount available
Subtotal 2 units (supplied in a tube)*
€56.02
(exc. VAT)
€68.90
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 2 - 4 | €28.01 |
| 5 - 9 | €25.87 |
| 10 - 19 | €24.07 |
| 20 + | €24.06 |
*price indicative
- RS Stock No.:
- 711-5336P
- Mfr. Part No.:
- IXFB38N100Q2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 38 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Package Type | PLUS264 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 250 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Maximum Power Dissipation | 890 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 20.29mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.31mm | |
| Typical Gate Charge @ Vgs | 250 nC @ 10 V | |
| Series | HiperFET, Q-Class | |
| Height | 26.59mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type PLUS264 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Maximum Power Dissipation 890 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 20.29mm | ||
Maximum Operating Temperature +150 °C | ||
Width 5.31mm | ||
Typical Gate Charge @ Vgs 250 nC @ 10 V | ||
Series HiperFET, Q-Class | ||
Height 26.59mm | ||
Minimum Operating Temperature -55 °C | ||
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