N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK Infineon SPB11N60C3ATMA1

RS Stock No.:: 752-8473P
Mfr. Part No.:: SPB11N60C3ATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK Infineon SPB11N60C3ATMA1

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Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

€2.89

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€3.55

(inc. VAT)

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999999 Within 2 working day(s) (EU stock)

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Units	Per unit
10 +	€2.45

**price indicative

RS Stock No.:: 752-8473P
Mfr. Part No.:: SPB11N60C3ATMA1
Manufacturer:: Infineon

SPB11N60C3, CoolMOS Power Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	650 V
Series	CoolMOS C3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	380 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	45 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Width	9.45mm
Length	10.31mm
Minimum Operating Temperature	-55 °C
Height	4.57mm

N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK Infineon SPB11N60C3ATMA1

Infineon CoolMOS™C3 Power MOSFET