N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380C6ATMA1

RS Stock No.:: 753-3011P
Mfr. Part No.:: IPD60R380C6ATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380C6ATMA1

Discontinued product

RS Stock No.:: 753-3011P
Mfr. Part No.:: IPD60R380C6ATMA1
Manufacturer:: Infineon

IPx60R380C6, 600V CoolMOS C6 Power Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10.6 A
Maximum Drain Source Voltage	650 V
Series	CoolMOS™ C6
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	380 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	32 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	6.73mm
Width	6.22mm
Minimum Operating Temperature	-55 °C
Height	2.41mm

N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380C6ATMA1

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