Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC Vishay SI4946BEY-T1-GE3

RS Stock No.:: 787-9027P
Mfr. Part No.:: SI4946BEY-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC Vishay SI4946BEY-T1-GE3

2180 In stock for delivery within 2 working days

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

€0.554

(exc. VAT)

€0.681

(inc. VAT)

Units	Per unit
5 +	€0.554

RS Stock No.:: 787-9027P
Mfr. Part No.:: SI4946BEY-T1-GE3
Manufacturer:: Vishay

Si4946BEY, Dual N-Channel 60V (Drain-Source) 175degC MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.7 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	2
Width	4mm
Transistor Material	Si
Typical Gate Charge @ Vgs	17 nC @ 10 V
Length	5mm
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC Vishay SI4946BEY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor