onsemi Dual N/P-Channel MOSFET, 1.5 A, 2 A, 20 V, 6-Pin MCPH MCH6660-TL-H
- RS Stock No.:
- 791-9493
- Mfr. Part No.:
- MCH6660-TL-H
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tape of 20 units)*
€8.30
(exc. VAT)
€10.20
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 20 | €0.415 | €8.30 |
| 40 - 180 | €0.34 | €6.80 |
| 200 - 380 | €0.262 | €5.24 |
| 400 - 780 | €0.241 | €4.82 |
| 800 + | €0.222 | €4.44 |
*price indicative
- RS Stock No.:
- 791-9493
- Mfr. Part No.:
- MCH6660-TL-H
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 1.5 A, 2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | MCPH | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 136 mΩ, 266 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 800 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Width | 1.6mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V | |
| Length | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.85mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.5 A, 2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MCPH | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 136 mΩ, 266 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 800 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Width 1.6mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.85mm | ||