N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1

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MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	43 A
Maximum Drain Source Voltage	60 V
Series	TK
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	53 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Length	10.16mm
Maximum Operating Temperature	+150 °C
Width	4.45mm
Typical Gate Charge @ Vgs	16 nC @ 10 V
Height	15.1mm