Toshiba TPH N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced TPH8R80ANH
- RS Stock No.:
- 796-5156
- Mfr. Part No.:
- TPH8R80ANH
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
€6.25
(exc. VAT)
€7.70
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | €1.25 | €6.25 |
| 50 - 95 | €0.974 | €4.87 |
| 100 - 245 | €0.938 | €4.69 |
| 250 - 495 | €0.914 | €4.57 |
| 500 + | €0.89 | €4.45 |
*price indicative
- RS Stock No.:
- 796-5156
- Mfr. Part No.:
- TPH8R80ANH
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 59 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | TPH | |
| Package Type | SOP Advanced | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 8.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 61 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5mm | |
| Length | 5mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Height | 0.95mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 59 A | ||
Maximum Drain Source Voltage 100 V | ||
Series TPH | ||
Package Type SOP Advanced | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 61 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5mm | ||
Length 5mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Height 0.95mm | ||
MOSFET Transistors, Toshiba