N-Channel MOSFET, 70 A, 40 V, 4-Pin SOT-669 Nexperia PSMN8R3-40YS,115
- RS Stock No.:
- 798-3034P
- Mfr. Part No.:
- PSMN8R3-40YS,115
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
€5.40
(exc. VAT)
€6.60
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 20 - 40 | €0.27 |
| 50 + | €0.24 |
*price indicative
- RS Stock No.:
- 798-3034P
- Mfr. Part No.:
- PSMN8R3-40YS,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 11.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 74 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.1mm | |
| Length | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 11.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.1mm | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors