N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

RS Stock No.:: 801-1382P
Mfr. Part No.:: IXFH18N100Q3
Manufacturer:: IXYS

N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

Bulk discount available

Subtotal (5 tubes of 1 unit)**

€97.15

(exc. VAT)

€119.50

(inc. VAT)

Temporarily out of stock - back order for despatch 15-10-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
5 - 9	€16.72
10 - 29	€16.02
30 - 89	€14.82
90 +	€14.05

**price indicative

RS Stock No.:: 801-1382P
Mfr. Part No.:: IXFH18N100Q3
Manufacturer:: IXYS

IXFT18N100Q3, IXFH18N100Q3, HiperFET Power MOSFET Q3-Class, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	1000 V
Series	HiperFET, Q3-Class
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	660 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Width	5.3mm
Typical Gate Charge @ Vgs	90 nC @ 10 V
Length	16.26mm
Transistor Material	Si
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	16.26mm

N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series