Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

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Subtotal (1 pack of 20 units)*

€8.80

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€10.80

(inc. VAT)

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Per Pack*
20 - 180€0.44€8.80
200 - 480€0.339€6.78
500 - 980€0.317€6.34
1000 - 1980€0.286€5.72
2000 +€0.265€5.30

*price indicative

Packaging Options:
RS Stock No.:
812-3126
Mfr. Part No.:
Si2338DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

Si2338DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Width

1.4 mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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