P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 Vishay SI3477DV-T1-GE3
- RS Stock No.:
- 812-3160
- Mfr. Part No.:
- SI3477DV-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)**
€9.56
(exc. VAT)
€11.76
(inc. VAT)
Temporarily out of stock - back order for despatch 18-07-2025, delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Pack** |
|---|---|---|
| 20 - 180 | €0.478 | €9.56 |
| 200 - 480 | €0.449 | €8.98 |
| 500 - 980 | €0.43 | €8.60 |
| 1000 - 1980 | €0.382 | €7.64 |
| 2000 + | €0.358 | €7.16 |
**price indicative
- RS Stock No.:
- 812-3160
- Mfr. Part No.:
- SI3477DV-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | TSOP-6 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 4.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.1mm | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| Width | 1.7mm | |
| Number of Elements per Chip | 1 | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type TSOP-6 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 4.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 3.1mm | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Width 1.7mm | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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