N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR416DP-T1-GE3

RS Stock No.:: 814-1272P
Mfr. Part No.:: SIR416DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR416DP-T1-GE3

Bulk discount available

Subtotal (10 reels of 10 units)**. Quantities below 150 on continuous strip

€111.60

(exc. VAT)

€137.30

(inc. VAT)

Temporarily out of stock - back order for despatch 09-07-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
100 - 240	€1.05
250 - 490	€0.949
500 - 990	€0.893
1000 +	€0.838

**price indicative

RS Stock No.:: 814-1272P
Mfr. Part No.:: SIR416DP-T1-GE3
Manufacturer:: Vishay

SiR416DP, N-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	27 A
Maximum Drain Source Voltage	40 V
Package Type	PowerPAK SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	4.2 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	69 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	5.26mm
Length	6.25mm
Typical Gate Charge @ Vgs	59 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR416DP-T1-GE3

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor