P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3

RS Stock No.:: 814-1304P
Mfr. Part No.:: SIS415DNT-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3

2920 In stock for delivery within 2 working days

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

€0.213

(exc. VAT)

€0.262

(inc. VAT)

Units	Per unit
20 +	€0.213

RS Stock No.:: 814-1304P
Mfr. Part No.:: SIS415DNT-T1-GE3
Manufacturer:: Vishay

SiS415DNT, P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	22 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	9.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Width	3.4mm
Typical Gate Charge @ Vgs	117 nC @ 10 V
Length	3.4mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.8mm

P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor