Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC Vishay SI4830CDY-T1-GE3

RS Stock No.:: 818-1292P
Mfr. Part No.:: SI4830CDY-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC Vishay SI4830CDY-T1-GE3

Bulk discount available

Subtotal (10 reels of 10 units)**. Quantities below 150 on continuous strip

€99.30

(exc. VAT)

€122.10

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
100 +	€0.758

**price indicative

RS Stock No.:: 818-1292P
Mfr. Part No.:: SI4830CDY-T1-GE3
Manufacturer:: Vishay

Si4830CDY, Dual N-Channel 30V (D-S) MOSFET with Schottky Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	7.5 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	25 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.9 W
Transistor Configuration	Series
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Typical Gate Charge @ Vgs	16.5 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC Vishay SI4830CDY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor