Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SI7288DP-T1-GE3

RS Stock No.:: 818-1390P
Mfr. Part No.:: SI7288DP-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SI7288DP-T1-GE3

11370 In stock for delivery within 2 working days

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

€0.507

(exc. VAT)

€0.624

(inc. VAT)

Units	Per unit
10 +	€0.507

RS Stock No.:: 818-1390P
Mfr. Part No.:: SI7288DP-T1-GE3
Manufacturer:: Vishay

Si7288DP, Dual N-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	40 V
Package Type	PowerPAK SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	22 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	15.6 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	5mm
Number of Elements per Chip	2
Transistor Material	Si
Typical Gate Charge @ Vgs	10 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	5.99mm
Minimum Operating Temperature	-55 °C
Height	1.07mm

Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SI7288DP-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor