DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 260 mA, 30 V Enhancement, 6-Pin SC-88 DMN63D8LDW-7
- RS Stock No.:
- 822-2598
- Mfr. Part No.:
- DMN63D8LDW-7
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 100 units)*
€7.20
(exc. VAT)
€8.90
(inc. VAT)
Temporarily out of stock
- Shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | €0.072 | €7.20 |
| 500 - 900 | €0.064 | €6.40 |
| 1000 - 1400 | €0.047 | €4.70 |
| 1500 - 2900 | €0.041 | €4.10 |
| 3000 + | €0.038 | €3.80 |
*price indicative
- RS Stock No.:
- 822-2598
- Mfr. Part No.:
- DMN63D8LDW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | UL 94V-0, J-STD-020, MIL-STD-202, RoHS, AEC-Q101 | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals UL 94V-0, J-STD-020, MIL-STD-202, RoHS, AEC-Q101 | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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