Essential and Operational Technologies

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Units	Per unit	Per Pack**
20 - 20	€1.601	€32.02
40 - 80	€1.265	€25.30
100 - 180	€1.185	€23.70
200 - 480	€1.105	€22.10
500 +	€1.025	€20.50

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	60 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS™ -T2
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	8.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	107 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	83 nC @ 10 V
	Transistor Material	Si
	Length	10mm
	Width	9.25mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	4.4mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 60 V
	Package Type D2PAK (TO-263)
	Series OptiMOS™ -T2
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 8.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 107 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 83 nC @ 10 V
	Transistor Material Si
	Length 10mm
	Width 9.25mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 4.4mm

Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK IPB80N06S4L05ATMA2

Infineon OptiMOS™ T2 Power MOSFETs

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