N-Channel MOSFET, 120 mA, 600 V, 3-Pin SOT-223 Infineon BSP125H6327XTSA1

RS Stock No.:: 826-9276P
Mfr. Part No.:: BSP125H6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 120 mA, 600 V, 3-Pin SOT-223 Infineon BSP125H6327XTSA1

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

€0.639

(exc. VAT)

€0.786

(inc. VAT)

50 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
50 +	€0.639

RS Stock No.:: 826-9276P
Mfr. Part No.:: BSP125H6327XTSA1
Manufacturer:: Infineon

BSP125 SIPMOS Power Transistor Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 mA
Maximum Drain Source Voltage	600 V
Series	SIPMOS®
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	45 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3V
Minimum Gate Threshold Voltage	1.3V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.5mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	6.5mm
Typical Gate Charge @ Vgs	4.4 nC @ 10 V
Height	1.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 mA, 600 V, 3-Pin SOT-223 Infineon BSP125H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs