Dual N-Channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363 Diodes Inc DMN3190LDW-7

RS Stock No.:: 827-0480P
Mfr. Part No.:: DMN3190LDW-7
Manufacturer:: DiodesZetex

Dual N-Channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363 Diodes Inc DMN3190LDW-7

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

€0.046

(exc. VAT)

€0.057

(inc. VAT)

5900 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
50 +	€0.046

RS Stock No.:: 827-0480P
Mfr. Part No.:: DMN3190LDW-7
Manufacturer:: DiodesZetex

DMN3190LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	335 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.8V
Maximum Power Dissipation	400 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	2.2mm
Typical Gate Charge @ Vgs	2 nC @ 10 V
Number of Elements per Chip	2
Transistor Material	Si
Width	1.35mm
Minimum Operating Temperature	-55 °C
Height	1mm

Dual N-Channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363 Diodes Inc DMN3190LDW-7

Dual N-Channel MOSFET, Diodes Inc.