N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

RS Stock No.:: 827-4919P
Mfr. Part No.:: CSD19536KCS
Manufacturer:: Texas Instruments

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

38 In stock for delivery within 2 working days

Price Each (Supplied in a Tube)

€3.33

(exc. VAT)

€4.10

(inc. VAT)

Units	Per unit
26 +	€3.33

RS Stock No.:: 827-4919P
Mfr. Part No.:: CSD19536KCS
Manufacturer:: Texas Instruments

ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	259 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220
Series	NexFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.2V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	118 nC @ 10 V
Width	4.7mm
Length	10.67mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Height	16.51mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

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