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Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD088N06N3GBTMA1

RS Stock No.:: 827-5081
Mfr. Part No.:: IPD088N06N3GBTMA1
Manufacturer:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD088N06N3GBTMA1

Stock information currently inaccessible

RS Stock No.:: 827-5081
Mfr. Part No.:: IPD088N06N3GBTMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	50 A
	Maximum Drain Source Voltage	60 V
	Series	OptiMOS™ 3
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	8.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	71 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Length	6.73mm
	Typical Gate Charge @ Vgs	36 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Width	6.22mm
	Minimum Operating Temperature	-55 °C
	Height	2.41mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 50 A
	Maximum Drain Source Voltage 60 V
	Series OptiMOS™ 3
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 8.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 71 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Length 6.73mm
	Typical Gate Charge @ Vgs 36 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Width 6.22mm
	Minimum Operating Temperature -55 °C
	Height 2.41mm

RoHS Status: Not Applicable