Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD088N06N3GBTMA1
- RS Stock No.:
- 827-5081
- Mfr. Part No.:
- IPD088N06N3GBTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
€18.775
(exc. VAT)
€23.10
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | €0.751 | €18.78 |
| 125 - 475 | €0.579 | €14.48 |
| 500 - 1225 | €0.517 | €12.93 |
| 1250 + | €0.406 | €10.15 |
*price indicative
- RS Stock No.:
- 827-5081
- Mfr. Part No.:
- IPD088N06N3GBTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 71 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Length 6.73mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
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