N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1,S4X(S

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MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220SIS
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	25 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.5mm
Transistor Material	Si
Length	10mm
Typical Gate Charge @ Vgs	16 nC @ 10 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Height	15mm