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Infineon OptiMOS P P-Channel MOSFET, 7.4 A, 30 V, 8-Pin DSO BSO200P03SHXUMA1

RS Stock No.:: 857-8494
Mfr. Part No.:: BSO200P03SHXUMA1
Manufacturer:: Infineon

Infineon OptiMOS P P-Channel MOSFET, 7.4 A, 30 V, 8-Pin DSO BSO200P03SHXUMA1

Subtotal (1 reel of 2500 units)*

€877.50

(exc. VAT)

€1,080.00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
2500 +	€0.351	€877.50

*price indicative

RS Stock No.:: 857-8494
Mfr. Part No.:: BSO200P03SHXUMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	7.4 A
	Maximum Drain Source Voltage	30 V
	Package Type	DSO
	Series	OptiMOS P
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	20 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	1.56 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Width	4mm
	Typical Gate Charge @ Vgs	40 nC @ 10 V
	Length	5mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1.65mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 7.4 A
	Maximum Drain Source Voltage 30 V
	Package Type DSO
	Series OptiMOS P
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 20 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 1.56 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Width 4mm
	Typical Gate Charge @ Vgs 40 nC @ 10 V
	Length 5mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1.65mm