Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	600 V
	Package Type	TO-3PN
	Series	SuperFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	208 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	75 nC @ 10 V
	Transistor Material	Si
	Length	16.2mm
	Width	5mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Height	20.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 600 V
	Package Type TO-3PN
	Series SuperFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 208 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 75 nC @ 10 V
	Transistor Material Si
	Length 16.2mm
	Width 5mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Height 20.1mm
	Minimum Operating Temperature -55 °C

onsemi SuperFET N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN FCA20N60F

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor