Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	600 V
	Series	SuperFET
	Package Type	TO-3PN
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	208 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	75 nC @ 10 V
	Transistor Material	Si
	Width	5mm
	Length	16.2mm
	Number of Elements per Chip	1
	Height	20.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 600 V
	Series SuperFET
	Package Type TO-3PN
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 208 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 75 nC @ 10 V
	Transistor Material Si
	Width 5mm
	Length 16.2mm
	Number of Elements per Chip 1
	Height 20.1mm
	Minimum Operating Temperature -55 °C

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi SuperFET N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN FCA20N60F

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor