MDF11N60BTH N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip

  • RS Stock No. 871-4915
  • Mfr. Part No. MDF11N60BTH
  • Manufacturer MagnaChip
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Attribute Value
Channel Type N
Maximum Continuous Drain Current 11 A
Maximum Drain Source Voltage 660 V
Package Type TO-220F
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 550 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Maximum Power Dissipation 49 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Length 10.71mm
Forward Diode Voltage 1.4V
Typical Gate Charge @ Vgs 38.4 nC @ 10 V
Minimum Operating Temperature -55 °C
Transistor Material Si
Height 16.13mm
Maximum Operating Temperature +150 °C
Width 4.93mm
320 In stock for delivery within 2 working days
Unit of sale: Each (In a Tube of 10)
(exc. VAT)
(inc. VAT)
Per unit
Per Tube*
10 +
*price indicative
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