N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP Infineon IPA086N10N3GXKSA1
- RS Stock No.:
- 892-2125P
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Manufacturer:
- Infineon
1885 In stock for delivery within 2 working days
Price Each (Supplied in a Tube)
€1.462
(exc. VAT)
€1.798
(inc. VAT)
| Units | Per unit |
| 50 - 120 | €1.462 |
| 125 - 245 | €1.366 |
| 250 - 495 | €1.272 |
| 500 + | €1.176 |
- RS Stock No.:
- 892-2125P
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 100 V |
| Series | OptiMOS 3 |
| Package Type | TO-220 FP |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 15.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 37.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.85mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10.65mm |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Height | 16.15mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 892-2125P
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Manufacturer:
- Infineon