SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D

RS Stock No.:: 915-8849
Mfr. Part No.:: C3M0120090D
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D

13 In stock for delivery within 2 working days

Added

Price Each

€8.76

(exc. VAT)

€10.77

(inc. VAT)

Units	Per unit
1 - 4	€8.76
5 - 9	€8.22
10 - 29	€8.03
30 - 89	€7.81
90 +	€7.63

RS Stock No.:: 915-8849
Mfr. Part No.:: C3M0120090D
Manufacturer:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	155 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	97 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Length	16.13mm
Typical Gate Charge @ Vgs	17.3 nC @ 15 V
Width	21.1mm
Transistor Material	SiC
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Height	5.21mm
Forward Diode Voltage	4.8V
Minimum Operating Temperature	-55 °C

RS Stock No.:: 915-8849
Mfr. Part No.:: C3M0120090D
Manufacturer:: Wolfspeed