JFETs

JFETs A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.What does JFET stand for? JFET stands for junction field-effect transistorN-Channel JFET ConstructionThe name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.P-Channel JFET ConstructionThe name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.Features and Benefits High input impedance Voltage controlled device High degree of isolation between the input and the output Less noiseWhat are they also known as? JUGFETWhat are JFET transistors used for? JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.What is the difference between a JFET & BJT (Bipolar Junction Transistor)? The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.What is doping of semiconductors? Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

...
Read more Read less

Filters

Viewing 41 - 60 of 106 products
Results per page
Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 166-0547
Mfr. Part No.PMBF4391,215
BrandNXP
€0.108
Each (On a Reel of 3000)
units
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 162-9314
Mfr. Part No.CPH6904-TL-E
€0.258
Each (On a Reel of 3000)
units
N 20 → 40mA 25 V - -25V Dual Common Source - Surface Mount CPH 6 6pF 2.3pF 2.9 x 1.6 x 0.9mm
RS Stock No. 163-0964
Mfr. Part No.MMBFJ309LT1G
€0.108
Each (On a Reel of 3000)
units
N 12 → 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 749-8268
Mfr. Part No.DSK5J01R0L
BrandPanasonic
€0.047
Each (In a Pack of 20)
units
N 5 → 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 806-1757
Mfr. Part No.J112
€0.27
Each (In a Pack of 50)
units
N min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 484-2498
Mfr. Part No.BFR31,215
BrandNXP
€0.409
Each (In a Pack of 10)
units
N 1 → 5mA 25 V -25 V -25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 169-7867
Mfr. Part No.DSK5J01P0L
BrandPanasonic
€0.158
Each (On a Reel of 3000)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 867-3287
Mfr. Part No.TF412ST5G
€0.291
Each (In a Pack of 50)
units
N 1.2 → 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
RS Stock No. 163-0037
Mfr. Part No.MMBFJ175LT1G
€0.108
Each (On a Reel of 3000)
units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 920-9928
Mfr. Part No.TF414T5G
€0.238
Each (In a Pack of 50)
units
N 0.05 → 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm
RS Stock No. 166-0537
Mfr. Part No.BF556A,215
BrandNXP
€0.259
Each (On a Reel of 3000)
units
N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 792-5173
Mfr. Part No.2SK932-23-TB-E
€0.094
Each (On a Tape of 25)
units
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-4251
Mfr. Part No.MMBF4093
€0.048
Each (In a Pack of 50)
units
N min. 8mA 0.2 V -40 V 40V Single Single 80 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 112-4185
Mfr. Part No.PMBF4393,215
BrandNXP
€0.39
Each
units
N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 626-3241
Mfr. Part No.PMBFJ110,215
BrandNXP
€0.39
Each (In a Pack of 5)
units
N min. 10mA 25 V -25 V -25V Single Single 18 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-2910
Mfr. Part No.J111
€0.065
Each (In a Bag of 10000)
units
N min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-2223
Mfr. Part No.MMBFJ110
€0.119
Each (On a Reel of 3000)
units
N Min. 10mA 15 V -25 V 25V Single Single 18 Ω Surface Mount SOT-23 3 85pF 85pF 2.92 x 1.4 x 0.94mm
RS Stock No. 163-2337
Mfr. Part No.MMBF4391LT1G
€0.076
Each (On a Reel of 3000)
units
N 50 → 150mA 30 V +30 V 30V Single Single 30 Ω Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 166-1840
Mfr. Part No.MMBFJ201
€0.086
Each (On a Reel of 3000)
units
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 166-3094
Mfr. Part No.MMBFJ176
€0.119
Each (On a Reel of 3000)
units
P -2 → -25mA 15 V +30 V -30V Single Single 250 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
Related Products
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices