JFETs | N-Channel | P-Channel | RS
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    JFETs

    A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

    N-Channel JFET Construction

    The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

    P-Channel JFET Construction

    The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

    Features and Benefits

    • High input impedance
    • Voltage-controlled device
    • A high degree of isolation between the input and the output
    • Less noise

    What are JFET transistors used for?

    JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

    What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

    The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

    What is the doping of semiconductors?

    Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

    95 Products showing for JFETs

    onsemi
    N
    min. 20mA
    -
    -35 V
    35V
    Single
    Single
    30 Ω
    Through Hole
    TO-92
    3
    28pF
    28pF
    5.2 x 4.19 x 5.33mm
    onsemi
    N
    min. 40mA
    -
    -25 V
    25V
    Single
    Single
    12 Ω
    Through Hole
    TO-92
    3
    85pF
    85pF
    4.58 x 3.86 x 4.58mm
    onsemi
    P
    -2 to -15mA
    15 V
    +30 V
    -30V
    Single
    Single
    -
    Surface Mount
    SOT-23
    3
    -
    -
    2.9 x 1.3 x 1.04mm
    onsemi
    N
    min. 2mA
    -
    -35 V
    35V
    Single
    Single
    100 Ω
    Through Hole
    TO-92
    3
    28pF
    28pF
    5.2 x 4.19 x 5.33mm
    onsemi
    N
    min. 5mA
    -
    -35 V
    35V
    Single
    Single
    50 Ω
    Through Hole
    TO-92
    3
    28pF
    28pF
    5.2 x 4.19 x 5.33mm
    onsemi
    N
    16 to 32mA
    15 V
    -
    -15V
    Single
    Single
    -
    Surface Mount
    CP
    3
    10pF
    2.9pF
    2.9 x 1.5 x 1.1mm
    Toshiba
    N
    14mA
    -
    -50 V
    -
    -
    -
    -
    -
    S-MINI
    3
    -
    -
    -
    Toshiba
    N
    14mA
    -
    -50 V
    -
    -
    -
    -
    -
    S-MINI
    3
    -
    -
    -
    Toshiba
    N
    14mA
    -
    -50 V
    -
    -
    -
    -
    -
    S-MINI
    3
    -
    -
    -
    onsemi
    N
    min. 20mA
    -
    -35 V
    35V
    Single
    Single
    30 Ω
    Through Hole
    TO-92
    3
    28pF
    28pF
    5.2 x 4.19 x 5.33mm
    Toshiba
    N
    1.2 to 3.0mA
    10 V
    -30 V
    -50V
    Single
    Single
    -
    Surface Mount
    SOT-346 (SC-59)
    3
    -
    -
    2.9 x 1.5 x 1.1mm
    Toshiba
    N
    1.2 to 3.0mA
    10 V
    -30 V
    -50V
    Single
    Single
    -
    Surface Mount
    SOT-346 (SC-59)
    3
    -
    -
    2.9 x 1.5 x 1.1mm
    Toshiba
    N
    0.3 to 0.75mA
    10 V
    -30 V
    -50V
    Single
    Single
    -
    Surface Mount
    SOT-346 (SC-59)
    3
    -
    -
    2.9 x 1.5 x 1.1mm
    Toshiba
    N
    0.3 to 0.75mA
    10 V
    -30 V
    -50V
    Single
    Single
    -
    Surface Mount
    SOT-346 (SC-59)
    3
    -
    -
    2.9 x 1.5 x 1.1mm
    onsemi
    N
    min. 20mA
    -
    -35 V
    35V
    Single
    Single
    30 Ω
    Through Hole
    TO-92
    3
    28pF
    28pF
    5.2 x 4.19 x 5.33mm
    Toshiba
    N
    14mA
    -
    -50 V
    -
    -
    -
    -
    -
    SMV
    5
    -
    -
    -
    Toshiba
    N
    14mA
    -
    -50 V
    -
    -
    -
    -
    -
    SMV
    5
    -
    -
    -
    Toshiba
    N
    14mA
    -
    -50 V
    -
    -
    -
    -
    -
    SMV
    5
    -
    -
    -
    NXP
    N
    12 to 25mA
    25 V
    +25 V
    25V
    Single
    Single
    -
    Surface Mount
    SOT-23 (TO-236AB)
    3
    -
    -
    3 x 1.4 x 1mm
    onsemi
    N
    min. 40mA
    -
    -25 V
    25V
    Single
    Single
    12 Ω
    Through Hole
    TO-92
    3
    85pF
    85pF
    4.58 x 3.86 x 4.58mm
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