MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Maximum Gate Threshold Voltage Mounting Type Minimum Gate Threshold Voltage Pin Count Maximum Gate Source Voltage Channel Mode Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 708-5134
Mfr. Part No.IRF510PBF
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€0.664
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N 5.6 A 100 V 540 mΩ TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 43 W Single 1
RS Stock No. 919-0023
Mfr. Part No.IRF510PBF
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€0.604
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N 5.6 A 100 V 540 mΩ TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 43 W Single 1
RS Stock No. 178-0786
Mfr. Part No.IRFP9240PBF
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€2.21
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RS Stock No. 541-0862
Mfr. Part No.IRFP9240PBF
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P 12 A 200 V 500 mΩ TO-247AC - Through Hole 2V 3 -20 V, +20 V Enhancement 150 W Single 1
RS Stock No. 301-338
Mfr. Part No.IRLD110PBF
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N 1 A 100 V 540 mΩ HVMDIP - Through Hole 1V 4 -10 V, +10 V Enhancement 1.3 W Single 1
RS Stock No. 178-0913
Mfr. Part No.IRLD110PBF
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€0.571
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N 1 A 100 V 540 mΩ HVMDIP - Through Hole 1V 4 -10 V, +10 V Enhancement 1.3 W Single 1
RS Stock No. 541-1039
Mfr. Part No.IRFD110PBF
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€2.20
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N 1 A 100 V 540 mΩ HVMDIP - Through Hole 2V 4 -20 V, +20 V Enhancement 1.3 W Single 1
RS Stock No. 919-4498
Mfr. Part No.IRFD110PBF
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€0.399
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N 1 A 100 V 540 mΩ HVMDIP - Through Hole 2V 4 -20 V, +20 V Enhancement 1.3 W Single 1
RS Stock No. 159-6516
Mfr. Part No.IRFP460BPBF
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N 20 A 500 V 250 mΩ TO-247AC - Through Hole 2V 3 -20 V, +20 V Enhancement 278 W Single 1
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N 20 A 500 V 250 mΩ TO-247AC - Through Hole 2V 3 -20 V, +20 V Enhancement 278 W Single 1
RS Stock No. 919-0036
Mfr. Part No.IRF9530PBF
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€0.938
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P 12 A 100 V 300 mΩ TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 88 W Single 1
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Mfr. Part No.IRF9530PBF
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P 12 A 100 V 300 mΩ TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 88 W Single 1
RS Stock No. 918-9871
Mfr. Part No.IRLU110PBF
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N 4.3 A 100 V 540 mΩ IPAK (TO-251) - Through Hole 1V 3 -10 V, +10 V Enhancement 2.5 W Single 1
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Mfr. Part No.IRLU110PBF
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N 4.3 A 100 V 540 mΩ IPAK (TO-251) - Through Hole 1V 3 -10 V, +10 V Enhancement 2.5 W Single 1
RS Stock No. 145-1619
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N 3.6 A 600 V 2.2 Ω TO-220AB - Through Hole 2V 3 -30 V, +30 V Enhancement 74 W Single 1
RS Stock No. 541-1922
Mfr. Part No.IRFB9N60APBF
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N 9.2 A 600 V 750 mΩ TO-220AB - Through Hole 2V 3 -30 V, +30 V Enhancement 170 W Single 1
RS Stock No. 708-4730
Mfr. Part No.IRF530PBF
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N 14 A 100 V 160 mΩ TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 88 W Single 1
RS Stock No. 541-1629
Mfr. Part No.IRFU210PBF
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N 2.6 A 200 V 1.5 Ω IPAK (TO-251) - Through Hole 2V 3 -20 V, +20 V Enhancement 2.5 W Single 1
RS Stock No. 178-0821
Mfr. Part No.IRFB9N60APBF
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N 9.2 A 600 V 750 mΩ TO-220AB - Through Hole 2V 3 -30 V, +30 V Enhancement 170 W Single 1
RS Stock No. 178-0904
Mfr. Part No.IRFU210PBF
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N 2.6 A 200 V 1.5 Ω IPAK (TO-251) - Through Hole 2V 3 -20 V, +20 V Enhancement 2.5 W Single 1