onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

RS Stock No.:: 121-6413
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

Bulk discount available

Price Each (In a Tube of 75)

€0.303

(exc. VAT)

€0.373

(inc. VAT)

160 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
75 - 75	€0.303	€22.725
150 - 450	€0.224	€16.80
525 - 975	€0.202	€15.15
1050 - 2475	€0.197	€14.775
2550 +	€0.192	€14.40

**price indicative

RS Stock No.:: 121-6413
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Minimum Operating Temperature	-65 °C
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	20 W
Width	6.22mm
Length	6.73mm
Height	2.38mm
Dimensions	6.73 x 6.22 x 2.38mm

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

NPN Darlington Transistors, ON Semiconductor

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