onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

RS Stock No.:: 790-5319
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

Subtotal (1 pack of 15 units)**

€8.43

(exc. VAT)

€10.36

(inc. VAT)

120 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
15 +	€0.562	€8.43

**price indicative

RS Stock No.:: 790-5319
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Maximum Power Dissipation	20 W
Dimensions	6.73 x 6.22 x 2.38mm
Width	6.22mm
Maximum Operating Temperature	+150 °C
Height	2.38mm
Length	6.73mm
Minimum Operating Temperature	-65 °C

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

NPN Darlington Transistors, ON Semiconductor

Standards

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