onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.:: 178-4811
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

Bulk discount available

Price Each (In a Tube of 75)**

€0.508

(exc. VAT)

€0.625

(inc. VAT)

465 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
75 - 75	€0.508	€38.10
150 - 300	€0.478	€35.85
375 +	€0.457	€34.275

**price indicative

RS Stock No.:: 178-4811
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

Datasheet - MJD112-1G

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Minimum Operating Temperature	-65 °C
Dimensions	6.73 x 2.38 x 6.35mm
Height	6.35mm
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	20 W
Length	6.73mm
Width	2.38mm

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

NPN Darlington Transistors, ON Semiconductor

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