Infineon 512 kB FRAM 8-Pin SOIC, FM24V05-G

RS Stock No.:: 124-2984P
Mfr. Part No.:: FM24V05-G
Manufacturer:: Infineon

Infineon 512 kB FRAM 8-Pin SOIC, FM24V05-G

Bulk discount available

Subtotal 10 units (supplied in a tube)*

€108.10

(exc. VAT)

€133.00

(inc. VAT)

In Stock

412 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
10 - 24	€10.81
25 - 99	€10.56
100 - 499	€10.27
500 +	€10.03

*price indicative

RS Stock No.:: 124-2984P
Mfr. Part No.:: FM24V05-G
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	FRAM
	Memory Size	512kB
	Organisation	64k x 8 Bit
	Data Bus Width	8bit
	Maximum Random Access Time	450ns
	Maximum Clock Frequency	3.4MHz
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Length	4.97mm
	Width	3.98 mm
	Height	1.38mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Minimum Supply Voltage	2V
	Automotive Standard	AEC-Q100
	Number of Bits per Word	8
	Number of Words	64K
	Maximum Supply Voltage	3.6V
	Minimum Operating Temperature	-40°C

	Select all
	Brand Infineon
	Product Type FRAM
	Memory Size 512kB
	Organisation 64k x 8 Bit
	Data Bus Width 8bit
	Maximum Random Access Time 450ns
	Maximum Clock Frequency 3.4MHz
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Length 4.97mm
	Width 3.98 mm
	Height 1.38mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Minimum Supply Voltage 2V
	Automotive Standard AEC-Q100
	Number of Bits per Word 8
	Number of Words 64K
	Maximum Supply Voltage 3.6V
	Minimum Operating Temperature -40°C

FM24V05-G Datasheet

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 512 kB FRAM 8-Pin SOIC, FM24V05-G

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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