Starpower DG75A08TDFQ, N-Channel IGBT Discrete, 100 A, 4-Pin TO-247PLUS-4L
- RS Stock No.:
- 427-754
- Mfr. Part No.:
- DG75A08TDFQ
- Manufacturer:
- Starpower
Bulk discount available
Subtotal (1 pack of 2 units)*
€7.54
(exc. VAT)
€9.28
(inc. VAT)
In Stock
- 30 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | €3.77 | €7.54 |
| 20 - 198 | €3.39 | €6.78 |
| 200 - 998 | €3.13 | €6.26 |
| 1000 - 1998 | €2.905 | €5.81 |
| 2000 + | €2.435 | €4.87 |
*price indicative
- RS Stock No.:
- 427-754
- Mfr. Part No.:
- DG75A08TDFQ
- Manufacturer:
- Starpower
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Product Type | IGBT Discrete | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Power Dissipation Pd | 378W | |
| Package Type | TO-247PLUS-4L | |
| Channel Type | N | |
| Pin Count | 4 | |
| Switching Speed | 30ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | DOSEMI | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Product Type IGBT Discrete | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Power Dissipation Pd 378W | ||
Package Type TO-247PLUS-4L | ||
Channel Type N | ||
Pin Count 4 | ||
Switching Speed 30ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series DOSEMI | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower IGBT Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as solar power.
Low switching loss
Maximum junction temperature 175°C
VCE(sat) with positive temperature coefficient
Very low reverse recovery loss based on SiC diode
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