STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin IPAK STD3NK60Z-1

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Subtotal (1 tube of 75 units)*

€31.35

(exc. VAT)

€38.55

(inc. VAT)

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  • 2,700 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
75 - 675€0.418€31.35
750 - 1425€0.397€29.78
1500 +€0.368€27.60

*price indicative

RS Stock No.:
151-949
Mfr. Part No.:
STD3NK60Z-1
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

600V

Package Type

IPAK

Series

SuperMESH

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.6Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

45W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

11.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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