Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

The Infineon CoolSiC MOSFET 650 V G1 showcases advanced silicon carbide technology, meticulously designed for high performance and reliability in demanding applications. Capitalising on over two decades of optimisation, this MOSFET delivers exceptional efficiency and ease of use, making it an ideal choice for various implementations, including solar inverters and electric vehicle charging systems. Its robust features ensure reliable operation in high temperature environments, paving the way for more compact and efficient power designs. Enhanced with a fast body diode and superior gate oxide reliability, this product stands out in its category, offering a unique balance of performance and user friendliness. Perfect for engineers striving for excellence within power supply circuits, this MOSFET embodies innovation and reliability, setting a new benchmark in the industry.

Optimised for high current switching
Enhanced avalanche capability for robustness
Compatible with standard drivers for flexibility
Kelvin source configuration reduces switching losses
High performance and reliability combined
Ideal for continuous hard commutation
Compact design enhances power density
Qualified for industrial applications per JEDEC standards