Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1

The Infineon MOSFET is a cutting edge MOSFET designed for high efficiency switching applications. This product exemplifies superior thermal performance, making it ideal for use in demanding environments such as server and telecom sectors. With its innovative CoolMOS CFD7 technology, it promises outstanding reliability and efficiency, particularly in resonant switching topologies, including LLC and phase shift full bridge applications. This MOSFET advances upon its predecessor with improved switching capabilities and a low on state resistance, optimising power density and enhancing the overall effectiveness of your designs. Built to meet the rigorous standards of industrial applications, the device provides excellent hard commutation ruggedness while maintaining exceptional performance across a broad temperature range.

Ultra fast body diode minimises switching losses
Best in class RDS(on) for efficiency improvements
Robust against hard commutation for reliability
Handles increased bus voltage for safety
Optimised for high power density in compact designs
Excels in light load conditions for industrial SMPS applications