Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T1-GE3

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€3.43

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€4.22

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1 - 9€3.43
10 - 49€2.12
50 - 99€1.64
100 +€1.27

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RS Stock No.:
735-128
Mfr. Part No.:
SIHB21N80AE-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

SIHB21N80AE

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.205Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

0.355mm

Length

0.42mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Power MOSFET designed for efficient operation in power supplies and other applications, aimed at reducing energy losses and enhancing reliability.

Compact D2PAK package for space-saving designs

Reduced switching and conduction losses for improved performance

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